APTGL475U120DAG APTGL475U120DAG C rev 2 october, 2012 www.microsemi.com 1 C 6 ck ekg ec absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 610 i c continuous collector current t c = 100c 475 i cm pulsed collector current t c = 25c 800 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 2307 w rbsoa reverse bias safe operating area t j = 150c 800a @ 1150v application ? zero current switching resonant mode features ? trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses ? kelvin source for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration ? aln substrate for improved thermal performance benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant single switch with series diode trench + field stop igbt4 v ces = 1200v i c = 475a @ tc = 100c downloaded from: http:///
APTGL475U120DAG APTGL475U120DAG C rev 2 october, 2012 www.microsemi.com 2 C 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v ; v ce = 1200v 4 ma t j = 25c 1.8 2.2 v ce(sat) collector emitter saturation voltage v ge =15v i c = 400a t j = 150c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 10 ma 5 5.8 6.5 v dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 24.6 c oes output capacitance 1.62 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 1.38 nf q g gate charge v ge =15v 3.4 c t d(on) turn-on delay time 160 t r rise time 30 t d(off) turn-off delay time 340 t f fall time inductive switching (25c) v ge = 15v v ce = 600v i c = 400a r g = 1.8 ? 80 ns t d(on) turn-on delay time 170 t r rise time 40 t d(off) turn-off delay time 450 t f fall time inductive switching (150c) v ge = 15v v ce = 600v i c = 400a r g = 1.8 ? 170 ns t j = 25c 20.8 e on turn-on switching energy t j = 150c 42 mj t j = 25c 22 e off turn-off switching energy v ge = 15v v ce = 600v i c = 400a r g = 1.8 ? t j = 150c 37.2 mj i sc short circuit current v ge 15v ; v cc =900v t p 10s ; t j =150c 2000 a series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1200 v t j = 25c 400 i rm maximum reverse leakage current v r =1200v t j = 125c 2000 a i f dc forward current t j = 90c 360 a i f = 360a 2.5 3 i f = 720a 3 v f diode forward voltage i f = 360a t j = 125c 1.8 v t j = 25c 265 t rr reverse recovery time t j = 125c 350 ns t j = 25c 3.3 q rr reverse recovery charge i f = 360a v r = 800v di/dt = 1200a/s t j = 125c 17.3 c downloaded from: http:///
APTGL475U120DAG APTGL475U120DAG C rev 2 october, 2012 www.microsemi.com 3 C 6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.065 r thjc junction to case thermal resistance series diode 0.13 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for teminals m5 2 3.5 n.m wt package weight 300 g sp6 package outline (dimensions in mm) see application note apt0601 - mounting instructio ns for sp6 power modules on www.microsemi.com typical igbt performance curve hard switching zcs zvs 0 10 20 30 40 50 60 70 80 0 120 240 360 480 600 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =1.8 ? t j =150c tc=75c operating frequency vs collector current downloaded from: http:///
APTGL475U120DAG APTGL475U120DAG C rev 2 october, 2012 www.microsemi.com 4 C 6 output characteristics (v ge =15v) t j =25c t j =150c 0 200 400 600 800 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =19v v ge =9v 0 200 400 600 800 01234 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 200 400 600 800 5678910111213 v ge (v) i c (a) energy losses vs collector current eon eoff 0 20 40 60 80 100 120 140 160 0 200 400 600 800 i c (a) e (mj) v ce = 600v v ge = 15v r g = 1.8 ? t j = 150c eon eoff 20 30 40 50 60 70 80 0 2.5 5 7.5 10 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 400a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 160 320 480 640 800 960 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =150c r g =1.8 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGL475U120DAG APTGL475U120DAG C rev 2 october, 2012 www.microsemi.com 5 C 6 typical series diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.03 0.06 0.09 0.12 0.15 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 150 300 450 600 750 900 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage trr vs. current rate of charge 180 a 360 a 720 a 0 100 200 300 400 0 1200 2400 3600 4800 6000 7200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =800v qrr vs. current rate charge 180 a 360 a 720 a 0 6 12 18 24 30 36 42 0 1200 2400 3600 4800 6000 7200 -di f /dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =800v irrm vs. current rate of charge 180 a 360 a 720 a 0 60 120 180 240 300 0 1200 2400 3600 4800 6000 7200 -di f /dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =800v capacitance vs. reverse voltage 0 600 1200 1800 2400 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 120 240 360 480 600 25 50 75 100 125 150 175 case temperature (oc) i f (av) (a) max. average forward current vs. case temp. duty cycle = 0.5 t j =175c downloaded from: http:///
APTGL475U120DAG APTGL475U120DAG C rev 2 october, 2012 www.microsemi.com 6 C 6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreem ent will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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